Substrate for manufacturing single crystal thin films

Details Substrate for manufacturing single crystal thin films Substrate for manufacturing single crystal thin films

1985-05-10

1988-04-05

Chiesa, Richard L.

Static molds

Forming grid or lattice type product

156647, 156657, 156668, 156DIG88, 264293, 428641, C03C 2506

Patent

active

047353961

ABSTRACT:
The invention is directed to a substrate for manufacturing single crystal thin films, wherein the substrate is a replica pattern of a monocrystalline or single crystal cleavage plane. Such replica pattern may be formed by pressing a material in a softened state against the cleavage plane of the single crystal, with subsequent hardening, and also, by subjecting the single crystal cleavage plane to vapor deposition or plating, and thereafter removing the formed layer from the single crystal cleavage plane.

REFERENCES:
patent: 4096025 (1978-06-01), Caslavsky et al.
patent: 4204599 (1980-05-01), Dunn
patent: 4218283 (1980-08-01), Saiki et al.
patent: 4229474 (1980-10-01), Harrington
patent: 4303463 (1981-12-01), Cook
patent: 4333792 (1982-06-01), Smith
patent: 4350561 (1982-09-01), Little
patent: 4371421 (1983-02-01), Fan et al.
patent: 4461670 (1984-07-01), Celler et al.
Distler et al, "Growth of Single Crystals Through Interfacial Layers", Journal of Crystal Growth, vol. 26, 1974, No. 1, pp. 21-26.

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