Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-01-04
2011-01-04
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S080000, C257S089000, C257S096000, C257S099000, C257S100000, C257S103000, C257SE33023, C257SE33067, C257SE33068, C438S022000, C438S027000
Reexamination Certificate
active
07863636
ABSTRACT:
A substrate for light-emitting diodes, obtained by stacking a single crystal layer to form a light-emitting diode element onto a ceramic composite layer for light conversion, the ceramic composite layer having been formed by a unidirectional solidification method so that the ceramic composite layer comprises a solidified body having formed therein at least two or more oxide phases selected from single metal oxides and complex metal oxides to be continuously and three-dimensionally entangled with each other, with each oxide phase having a single crystal orientation, wherein at least one oxide phase out of the oxide phases in the solidified body contains a metal element oxide capable of emitting fluorescence.
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Mitani Atsuyuki
Sakata Shin-ichi
DLA Piper (LLP) US
Nguyen Dao H
Ube Industries Ltd.
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