Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-09-13
2005-09-13
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S059000, C257S072000
Reexamination Certificate
active
06943369
ABSTRACT:
Substrates suitable to manufacture and products of a thin film semiconductor device are provided, by at first preparing a manufacturing substrate having a characteristic capable of enduring a process for forming a thin film transistor and a product substrate having a characteristic of being suitable to direct mounting of the thin film transistor in a preparatory step, then applying a bonding step to bond the manufacturing substrate to the product substrate for supporting the product substrate at the back, successively applying a formation step to form at least a thin film transistor to the surface of the product substrate in a state reinforced with the manufacturing substrate and, finally, applying a separation step to separate the manufacturing substrate after use from the product substrate.
REFERENCES:
patent: 5189549 (1993-02-01), Leventis et al.
patent: 5208690 (1993-05-01), Hayashi et al.
patent: 5376561 (1994-12-01), Vu et al.
patent: 5384069 (1995-01-01), Yoshinaga et al.
patent: 5475515 (1995-12-01), Yoshinaga et al.
patent: 5476810 (1995-12-01), Curran
patent: 5540858 (1996-07-01), Yoshinaga et al.
patent: 5585951 (1996-12-01), Noda et al.
patent: 5830542 (1998-11-01), Shigeno
patent: 5940154 (1999-08-01), Ukita et al.
patent: 6049106 (2000-04-01), Forbes
patent: 6057234 (2000-05-01), Yamazaki
patent: 6067135 (2000-05-01), Shimizu et al.
patent: 6157426 (2000-12-01), Gu
patent: 6198464 (2001-03-01), Ota et al.
patent: 6218702 (2001-04-01), Yamazaki et al.
patent: 6458613 (2002-10-01), Bae
patent: 2002/0164535 (2002-11-01), Hoffend, Jr. et al.
patent: 11265155 (1998-03-01), None
patent: 2001066348 (1999-12-01), None
Kananen Ronald P.
Lewis Monica
Rader & Fishman & Grauer, PLLC
Wilczewski Mary
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