Substrate for integrated components comprising a thin film and a

Details Substrate for integrated components comprising a thin film and a Substrate for integrated components comprising a thin film and a

1995-01-25

1997-08-26

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

257619, 257622, 257714, 257715, H01L 2906, H01L 2334

Patent

active

056613334

ABSTRACT:
A substrate for integrated components including a support structure and a thin non-conductive film. An intermediate film is placed between the support structure and the thin non-conductive film. The intermediate film is a sacrificial film which may be removed chemically. By doing so, the thin non-conductive film may be liberated from the support structure. The intermediate film is traversed by channels which carry the chemicals for removing the sacrificial film. The channels may form a grid on the surface of the intermediate film.

REFERENCES:
patent: 4060823 (1977-11-01), Howorth et al.
"Laser Machining and Anisotropic Etching of <111> Silicon for Applications in Microsystems", M. Alavi, et al., pp. 227-231.

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