Substrate for growing gallium nitride compound-semiconductor dev

Details Substrate for growing gallium nitride compound-semiconductor dev Substrate for growing gallium nitride compound-semiconductor dev

1990-02-26

1992-06-16

James, Andrew J.

Compositions

Radioactive compositions

Nuclear reactor fuel

357 61, 252623GA, H01L 3300

Patent

active

051228459

ABSTRACT:
A substrate for producing a gallium nitride compound-semiconductor (Al.su Ga.sub.1-x N; X=0 inclusive) device in vapor phase on a sapphire substrate using gaseous organometallic compound, and a also blue light emitting diode produced by using the substrate. The buffer layer comprising aluminium nitride (AlN) and having a crystal structure where microcrystal or polycrystal is mixed in amorphous state, is formed on the sapphire substrate. The buffer layer is formed at a growth temperature of 380.degree. to 800.degree. C. to have a thickness of 100 to 500 .ANG.. Further, on the buffer layer is formed the layer of gallium nitride compound-semiconductor (Al.sub.x Ga.sub.1-x N; X=0 inclusive). The layer of gallium nitride compound-semiconductor (Al.sub.x Ga.sub.1-x N; X=0 inclusive) comprising at least two layers having different conductive types and being sequentially layered on the buffer layer, functions as a light emitting layer. The existence of the buffer layer having the aforementioned structure greatly contributes on the improved high-quality single crystal of the gallium nitride compound-semiconductor. On the other hand, the blue light emitting property is also improved due to the increase of the quality.

REFERENCES:
patent: 4614961 (1986-09-01), Khan et al.
patent: 4616248 (1986-10-01), Khan et al.

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