Substrate for growing compound semiconductor and epitaxial...

Details Substrate for growing compound semiconductor and epitaxial... Substrate for growing compound semiconductor and epitaxial...

2007-02-02

2010-06-29

Rao, G. Nagesh (Department: 1792)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Heterojunction formed between semiconductor materials which...

C257S201000, C438S795000, C117S083000, C117S084000, C117S085000, C117S086000, C117S087000, C117S101000

Reexamination Certificate

active

07745854

ABSTRACT:
It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing a compound semiconductor layer, particularly an Al-based compound semiconductor layer.In a substrate for growing a compound semiconductor, in which a crystal surface inclined at a predetermined off angle with respect to a (100) plane is a principal plane, an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is set to be less than 35°, and the compound semiconductor layer is epitaxially grown on the substrate.

REFERENCES:
patent: 5569954 (1996-10-01), Hata et al.
patent: 5647917 (1997-07-01), Oida et al.
patent: 6797532 (2004-09-01), Ueda
patent: 7338902 (2008-03-01), Nakamura et al.
patent: 7442355 (2008-10-01), Kawase
patent: 61-70180 (1986-04-01), None
patent: 62-226891 (1987-10-01), None
patent: 64-82525 (1989-03-01), None
patent: 01239188 (1989-09-01), None
patent: 6-92278 (1994-11-01), None
patent: 7-6957 (1995-01-01), None
patent: 7-193007 (1995-07-01), None
patent: 8-37293 (1996-02-01), None
patent: 2750331 (1998-02-01), None
patent: 11-003989 (1999-01-01), None
patent: 11003989 (1999-01-01), None
patent: 3081706 (2000-06-01), None
patent: 3129112 (2000-11-01), None
patent: 2002-273647 (2002-09-01), None
patent: 2004-339003 (2004-12-01), None

Affiliated with

Also associated with

Rating

Substrate for growing compound semiconductor and epitaxial... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substrate for growing compound semiconductor and epitaxial..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate for growing compound semiconductor and epitaxial... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4243530