Substrate for forming semiconductor layer including...

Details Substrate for forming semiconductor layer including... Substrate for forming semiconductor layer including...

2011-03-29

2011-03-29

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

C257S078000, C257S103000, C257S431000, C257S432000, C257S433000, C257S434000, C257S442000, C257S443000, C257S446000, C257SE23179, C257SE21108, C257SE21131, C438S401000, C438S462000, C438S478000, C250S370080, C250S370100, C250S370120, C250S370130, C250S370140

Reexamination Certificate

active

07915747

ABSTRACT:
A substrate for forming a semiconductor layer includes a plurality of linear convexes or grooves on a surface of the substrate by crystal growth. The plurality of linear convexes or grooves are formed along a direction of a cleavage plane of the semiconductor layer.

REFERENCES:
patent: 5727008 (1998-03-01), Koga
patent: 5729020 (1998-03-01), Matsushita et al.
patent: 6864590 (2005-03-01), Bae et al.
patent: 2005/0202682 (2005-09-01), Kiyoku et al.
patent: 2006/0102924 (2006-05-01), Otani et al.
patent: 11-40849 (1999-02-01), None
patent: 2002-305149 (2002-10-01), None
patent: 2003-113000 (2003-04-01), None

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