Substrate for forming a solid-state image pickup element,...

Details Substrate for forming a solid-state image pickup element,... Substrate for forming a solid-state image pickup element,...

2008-07-01

2008-07-01

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S291000, C257S461000, C257SE31131

Reexamination Certificate

active

07394141

ABSTRACT:
A substrate for a solid-state image pickup element, comprising: an n-type silicon substrate; and an n-type epitaxial growth layer formed on a surface of the n-type silicon substrate, wherein the substrate is configured to form a solid-state image pickup element in the n-type epitaxial growth layer, the solid-state image pickup element comprising: a photoelectric converting section; and a charge transferring section having charge transfer electrodes which transfer charges produced in the photoelectric converting section, and the n-type silicon substrate has a specific resistance of 10/1,000 Ωcm or less.

REFERENCES:
patent: 5386108 (1995-01-01), Arikawa et al.
patent: 2002/0000242 (2002-01-01), Matushiita et al.
patent: 2003-92301 (2003-03-01), None

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