Incremental printing of symbolic information – Ink jet – Ejector mechanism
Reexamination Certificate
2002-04-30
2003-04-29
Tran, Huan (Department: 2853)
Incremental printing of symbolic information
Ink jet
Ejector mechanism
C347S065000
Reexamination Certificate
active
06554403
ABSTRACT:
THE FIELD OF THE INVENTION
The present invention relates generally to fluid ejection devices, and more particularly to a substrate for a fluid ejection device.
BACKGROUND OF THE INVENTION
In some fluid ejection devices, such as printheads, a drop ejecting element is formed on a front side of a substrate and fluid is routed to an ejection chamber of the drop ejecting element through an opening or slot in the substrate. Often, the substrate is a silicon wafer and the slot is formed in the wafer by chemical etching. Existing methods of forming the slot through the substrate include etching into the substrate from both the front side and the backside thereof so as to form a front side opening and a backside opening in the substrate.
Unfortunately, since a portion of the slot is formed by etching into the substrate from the front side and a portion of the slot is formed by etching into the substrate from the backside, misalignment between the backside opening and the front side opening of the slot may occur. Such misalignment may result, for example, in undercutting of one or more layers formed on the front side of the substrate.
Accordingly, it is desired to accommodate misalignment between the backside opening and the front side opening of the slot through the substrate.
SUMMARY OF THE INVENTION
One aspect of the present invention provides a substrate for a fluid ejection device. The substrate includes a first side, a second side opposite the first side, spaced etch stops extending into the substrate from the first side, and a fluidic channel communicating with the first side and the second side, wherein a first portion of the fluidic channel extends from the first side toward the second side between the spaced etch stops and a second portion of the fluidic channel extends from the second side toward the first side to the spaced etch stops.
REFERENCES:
patent: 5124717 (1992-06-01), Campanelli et al.
patent: 5141596 (1992-08-01), Hawkins et al.
patent: 5385635 (1995-01-01), O'Neill
patent: 5387314 (1995-02-01), Baughman et al.
patent: 5393711 (1995-02-01), Biallas et al.
patent: 5441593 (1995-08-01), Baughman et al.
patent: 5498312 (1996-03-01), Laermer et al.
patent: 5501893 (1996-03-01), Laermer et al.
patent: 5526454 (1996-06-01), Mayer
patent: 5541140 (1996-07-01), Goebel et al.
patent: 5716533 (1998-02-01), O'Neill et al.
patent: 5756901 (1998-05-01), Kurle et al.
patent: 5870123 (1999-02-01), Lorenze, Jr. et al.
patent: 6008138 (1999-12-01), Laermer et al.
patent: 6045710 (2000-04-01), Silverbrook
patent: 6081635 (2000-06-01), Hehmann
patent: 6096656 (2000-08-01), Matzke et al.
patent: 6139761 (2000-10-01), Ohkuma
patent: 6305080 (2001-10-01), Komuro et al.
patent: 19538103 (1997-04-01), None
patent: 0865151 (1998-09-01), None
patent: 0886307 (1998-12-01), None
patent: 0978832 (2000-02-01), None
patent: 2245366 (1992-01-01), None
patent: 2290413 (1995-12-01), None
patent: 2341348 (2000-03-01), None
patent: WO 9837577 (1998-08-01), None
patent: WO 0023376 (2000-04-01), None
“Cryogenic Etching of Deep Narrow Trenches In Silicon”; by: Aachboun et al.; Journal Of Vacuum Science & Technology A; vol. 18, No. 4; pt. 1-2; Jul.-Aug. 2000; Abstract Only.
“An Array of Hollow Microcapillaries For The Controlled Injection of Genetic Materials Into Animal/Plant Cells”; by: K. Chun et al.; Proceedings of 12th International Workshop on Micro Electro Mechanical Systems (MEMS); Jan. 1999; Abstract Only.
“Deep Etching Key to the MEMS/MST Revolution”; by: Prashant Gadill; R & D; Jul. 1998; p. 38.
“Anisotropic Silicon Etch Characterization in the TFTL STS Etcher”; Aug. 20, 1999; pp. 1-5.
“Etching Characteristics And Profile Control in a Time Multiplexed Inductively Coupled Plasma Etcher”; by: AA Ayon, CC Lin, RA Braff & MA Schmidt of the Department of Electrical Engineering and Computer Science (EECS); Solid-State Sensor and Actuator Workshop, Hilton Head Island, SC; Jun.8-11, 1998; pp. 41-44.
“Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher”; by: AA Ayon, R Braff, CC Lin, HH Saw in & MA Schmidt; Journal of the Electrochemical Society; 146 (1); 1999; pp: 339-349.
STS-Surface Technology Systems-1st ASE Users Meeting, pp. 1-10; Advanced Silicon Etch, pp. 1-28; Technology Review, pp. 1-10, California, 1997.
“High-Aspect-Ratio Si Etching for Microsensor Fabrication”; by: WH Juan & SW Pang; Journal of Vacuum Science & Technology A; vol. 13, No. 3; 1995; pp: 834-838.
“Bosch Deep Silicon Etching: Improved Uniformity and Etch Rate for Advanced MEMS Applications”; by: F Laermer et al.; 0-7803-5194-00; 1999; pp. 211-216.
“Advanced Silicon Etching Using High Density Plasmas”; by: JK Bhardwaj & H Ashraf; SPIE-Society of Photo-Optical Instrumentation Engineers; vol. 2639; Oct. 1995; pp 224-233.
“Recent Advances in Silicon Etching for MEMS Using the ASE Process”; by: AM Hynes et al.; Sensors and Actuators; vol. 74; 1999; pp 13-17.
“Fabrication of Thick Silicon Dioxide Layers Using DRIE, Oxidation and Trench Refill”; by: C Zhang & K Najafi; Proceedings of 15th IEEE International Conference on Micro Electro Mechanical Systems; Jan. 20-24, 2002; pp. 160-163.
“Fabrication of Out-of-Plane Curveo Surfaces in SI by Utilizing RIE Lag”; by: TA Chou & K Najafi; Proceedings of 15th IEEE International Conference on Micro Electro Mechanical Systems; Jan. 20-24, 2002; pp. 145-148.
Chen Chien-Hua
Kramer Kenneth Michael
Hewlett--Packard Development Company, L.P.
Stephens Juanita
Tran Huan
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