Substrate for epitaxy and epitaxy using the substrate

Details Substrate for epitaxy and epitaxy using the substrate Substrate for epitaxy and epitaxy using the substrate

1993-04-23

1995-07-18

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

137 93, 137107, 117 84, H01L 2120

Patent

active

054341000

ABSTRACT:
A substrate wafer for epitaxy of a compound semiconductor single crystal and an epitaxy using the substrate wafer are disclosed. Where the orientation off-angle from the <100> plane of an area available for device formation of a surface of the substrate wafer is .theta..degree., and the growth rate on an epitaxial layer on the substrate wafer is V .mu.m/hr, and the growth temperature of the epitaxial layer is T K, the orientation off-angle .theta..degree. is given by the following expression: ##EQU1## where 0.1.ltoreq.V.ltoreq.10 and 853.ltoreq.T.ltoreq.1023. The substrate wafer is capable of significantly reducing the number of teardrop-like hillock defects which appear on the surface of the epitaxial layer and of increasing the smoothness of the surface of the epitaxial layer.

REFERENCES:
patent: 3821783 (1974-06-01), Sugita et al.
patent: 5230768 (1993-07-01), Furukawa et al.
patent: 5248385 (1993-09-01), Powell
patent: 5279701 (1994-01-01), Shigeta et al.
Jauslin, H. R., et al., Fabrication of Crystal Surfaces With Low Dislocation Density, Apr. 1982, IBM Technical Disclosure Bulletin, vol. 24, No. 11A, p. 5329.

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