Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1998-12-23
2000-05-23
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 72, 257296, 257350, H01L 2904, H01L 27108, H01L 2976, H01L 2994, H01L 31119
Patent
active
060668601
ABSTRACT:
In a conventional MOS semiconductor device of a thin film SOI structure, excessive carriers accumulated in the channel region cause some problems, such as a decreased drain breakdown voltage and formation of kink in the current-voltage relationship, resulting in malfunction. Accordingly, drainage of the excessive carriers accumulated in the semiconductor layer functioning as a channel region of the thin film transistor on a substrate for electro-optical apparatuses is achieved.
REFERENCES:
patent: 5644147 (1997-07-01), Yamazaki et al.
patent: 5990629 (1999-11-01), Yamada et al.
Katayama Shigenori
Yasukawa Masahiro
Ngo Ngan V.
Seiko Epson Corporation
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