Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-08-07
2007-08-07
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S758000, C257S759000, C257S775000, C257SE51005, C438S048000, C438S128000, C438S149000, C438S151000, C438S157000, C438S283000
Reexamination Certificate
active
11238547
ABSTRACT:
The invention relates to a substrate for a display, a method of manufacturing the same, and a display having the same and provides a substrate for a display which can be manufactured through simple steps with high reliability, a method of manufacturing the same, and a display having the same. The substrate is configured to have a gate bus line, an OC layer formed on the gate bus line, a pixel electrode formed on the OC layer at each pixel region, and a gate terminal for electrically connecting an external circuit and the gate bus line. The gate terminal includes a gate terminal bottom electrode which has an Al type metal layer having a first end face and a high melting point metal layer formed on the Al type metal layer and having a second end face located outwardly from the first end face and which is electrically connected to the gate bus line and a gate terminal top electrode which is formed of the same material as that of the pixel electrode on the gate terminal bottom electrode and which is electrically connected to the gate terminal bottom electrode without contacting the first end face.
REFERENCES:
patent: 6897479 (2005-05-01), Fujikawa et al.
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Hirota Shiro
Misaki Katsunori
Greer Burns & Crain Ltd.
Jackson Jerome
Nguyen Joseph
Sharp Kabushiki Kaisha
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