Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate
2004-08-17
2008-12-02
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Solder wettable contact, lead, or bond
Reexamination Certificate
active
07459794
ABSTRACT:
A substrate for device bonding includes a substrate having an electrode layer and a solder layer formed on the electrode layer, wherein the solder layer is a Pb-free solder layer which comprises (1) a base metal composed of (i) Sn, (ii) Sn and Au, or (iii) In, (2) at least one metal selected from the group consisting of Bi, In (only in the case where the base metal is Sn, or Sn and Au), Zn, Au (only in the case where the base metal is In) and Sb, and (3) at least one metal selected from the group consisting of Ag, Ni, Fe, Al, Cu and Pt, and the solder layer has a thickness of 1 to 15 μm and a surface roughness (Ra) of not more than 0.11 μm.
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Abtew, Mulugeta et al., “Lead-Free Solders in Microelectronics”,Materials Science and Engineering, Reports: A Review Journal, 27 (2000), pp. 95-141.
Takeda Yasuko
Yamamoto Reo
Yokoyama Hiroki
Ha Nathan W
The Webb Law Firm, P.C
Tokuyama Corporation
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