Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-03-24
2009-12-01
Clark, Jasmine J (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S734000, C257S736000, C257S737000, C257S751000, C257S762000, C257S763000, C257S764000, C257S766000, C257S769000, C257S772000, C257S779000, C257S780000, C257S781000, C257SE23160, C257SE23162, C438S614000, C438S627000, C438S652000, C438S653000, C438S686000, C438S687000
Reexamination Certificate
active
07626264
ABSTRACT:
A substrate for device bonding is provided, which enables bonding of a device with high bond strength to an Au electrode formed on a substrate such as aluminum nitride by soldering the device at a low temperature using a soft solder metal having a low melting point such as an Au—Sn-based solder having an Au content of 10% by weight. The substrate for device bonding comprises a substrate having an Au electrode layer formed on its surface and in which (i) a layer composed of a platinum group element, (ii) a layer composed of at least one transition metal element selected from the group consisting of Ti, V, Cr and Co, (iii) a barrier metal layer composed of at least one metal selected from the group consisting of Ag, Cu and Ni and (iv) a solder layer composed of a solder containing Sn or In as a main component are laminated in this order on the Au electrode layer.
REFERENCES:
patent: 4817854 (1989-04-01), Tihanyi et al.
patent: 5021300 (1991-06-01), Stacey
patent: 5990560 (1999-11-01), Coult et al.
patent: 7015583 (2006-03-01), Ishii et al.
patent: 7196356 (2007-03-01), Ishii et al.
patent: 60-074539 (1985-04-01), None
patent: 61-119051 (1986-06-01), None
patent: 5-186884 (1993-07-01), None
patent: 11-192581 (1999-07-01), None
patent: 2002-124524 (2002-04-01), None
patent: 2002-368020 (2002-12-01), None
patent: 2002-373960 (2002-12-01), None
patent: 2003-200289 (2003-07-01), None
patent: 2004-072048 (2004-03-01), None
Clark Jasmine J
The Webb Law Firm
Tokuyama Corporation
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