Substrate for amorphous silicon semiconductor material

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

136256, 136258, 357 2, 357 30, 357 71, 428620, H01L 3106

Patent

active

045515751

ABSTRACT:
A substrate for an amorphous silicon semiconductor material characterized in that a metal or alloy film is formed on the surface of a metal substrate by means of an electroplating treatment.

REFERENCES:
patent: 4251289 (1981-02-01), Moustakas et al.
patent: 4284689 (1981-08-01), Craighead et al.
patent: 4334523 (1982-06-01), Spanoudis
patent: 4359367 (1982-11-01), Zukotynski et al.
patent: 4431710 (1984-02-01), Lifshin et al.
patent: 4439470 (1984-03-01), Sievers

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Substrate for amorphous silicon semiconductor material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substrate for amorphous silicon semiconductor material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate for amorphous silicon semiconductor material will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-296548

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.