Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1994-01-28
1995-05-16
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257347, 359 82, 437248, H01L 21324
Patent
active
054163412
ABSTRACT:
A silicon-on-insulator (SOI) substrate has an insulating substrate having a glass substrate and an insulating layer formed on the substrate, an array of isolated silicon film pieces formed on a pixel area of the insulating substrate, a meshed silicon film formed on a drive circuit area of the insulating substrate, both the meshed and isolated silicon films being composed of hydrogenated amorphous silicon or polycrystalline silicon. In manufacturing a semiconductor device from the SOI substrate, the meshed silicon film is annealed for recrystallizing selectively from the isolated silicon film pieces by induction heating. A reliable and reproducible semiconductor device for use in LCD is fabricated at a low cost.
REFERENCES:
patent: 5247375 (1993-09-01), Mochizuki et al.
Jackson Jerome
Kelley Nathan K.
NEC Corporation
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