Substrate contact for gate array base cell and method of forming

Details Substrate contact for gate array base cell and method of forming Substrate contact for gate array base cell and method of forming

1995-08-29

1996-11-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

257208, 257369, 257901, H01L 2710

Patent

active

055742980

ABSTRACT:
A method for forming a gate array substrate contact and the contact resulting therefrom includes the steps of etching off polysilicon gate layers at the same time as cutting the polysilicon to form the gate array base cell (10). The method includes forming openings (40, 42, and 44) in the second insulating layer (34) and insulating layer (30) to connect a lead (46, 48, and 50) to the underlying substrate.

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patent: 5408118 (1995-04-01), Yamamoto
patent: 5410171 (1995-04-01), Tsuzuki et al.
patent: 5426320 (1995-06-01), Zambrano

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