Substrate contact for a capped MEMS and method of making the...

Details Substrate contact for a capped MEMS and method of making the... Substrate contact for a capped MEMS and method of making the...

2008-01-08

2008-01-08

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C257SE21238

Reexamination Certificate

active

11158793

ABSTRACT:
A MEMS device (100) is provided that includes a handle layer (108) having a sidewall (138), a cap (132) overlying said handle layer (108), said cap (132) having a sidewall (138), and a conductive material (136) disposed on at least a portion of said sidewall of said cap (138) and said sidewall of said handle layer (138) to thereby electrically couple said handle layer (108) to said cap (132). A wafer-level method for manufacturing the MEMS device from a substrate (300) comprising a handle layer (108) and a cap (132) overlying the handle layer (108) is also provided. The method includes making a first cut through the cap (132) and at least a portion of the substrate (300) to form a first sidewall (138), and depositing a conductive material (136) onto the first sidewall (138) to electrically couple the cap (132) to the substrate (300).

REFERENCES:
patent: 4219835 (1980-08-01), van Loon et al.
patent: 6271060 (2001-08-01), Zandman et al.
patent: 6790709 (2004-09-01), Dias et al.
patent: 2005/0067676 (2005-03-01), Mahadevan et al.

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