Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-01-11
2011-01-11
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C438S072000, C438S636000
Reexamination Certificate
active
07868407
ABSTRACT:
There is disclosed a substrate comprising at least an organic film, an antireflection silicone resin film over the organic film, and a photoresist film over the antireflection silicone resin film, wherein the antireflection silicone resin film includes a lower silicone resin film and an upper silicone resin film which has lower silicon content than the lower silicone resin film. There can be provided a substrate comprising at least an organic film, an antireflection silicone resin film over the organic film, and a photoresist film over the antireflection silicone resin film, in which the antireflection silicone resin film has both excellent resist compatibility and high etching resistance at the time of etching the organic film, whereby a pattern can be formed with higher precision.
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K. Linliu et al., “A Novel Dual Layer Polymeric Anti-Reflective Coating (PARC) for Sub-0.18 μm KrF Lithography”, Proceedings of SPIE, vol. 4000, (2000) pp. 982-993.
Ogihara Tsutomu
Ueda Takafumi
Montalvo Eva Yan
Oliff & Berridg,e PLC
Pizarro Marcos D.
Shin-Etsu Chemical Co. , Ltd.
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