Substrate cleaning method, substrate cleaning equipment,...

Cleaning and liquid contact with solids – Processes – With work or work parts movable during treatment

Reexamination Certificate

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C134S018000, C134S021000, C134S025100, C134S025400, C134S026000, C134S030000, C134S031000, C134S032000, C134S034000, C134S036000, C134S037000, C134S042000, C134S902000, C034S060000, C034S222000, C034S443000, C034S487000, C034S488000

Reexamination Certificate

active

07837804

ABSTRACT:
In a dry process after a cleaning process using a cleaning-liquid nozzle and a rinse process using a side rinse nozzle are performed on a wafer W, the wafer W is turned, feeding of pure water to a center point of the wafer W from a pure-water nozzle is started, and substantially at the same, injection of a nitrogen gas from a gas nozzle to a center portion of the wafer W at a point at an adequate distance apart from the center of the wafer W is started. Next, while the pure-water nozzle is caused to scan toward the periphery of the wafer W, the gas nozzle is caused to scan toward the periphery of the wafer W in an area radially inward of the position of the pure-water nozzle after the gas nozzle passes the center of the wafer W.

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Office Action (Application No. 200580012831.X).

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