Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2011-01-18
2011-01-18
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S077000, C257S103000
Reexamination Certificate
active
07872268
ABSTRACT:
A semiconductor photonic device and associated method are disclosed. The device includes a substrate and a buffer structure on the substrate. The buffer structure is formed of a discontinuous layer of aluminum gallium nitride and a gallium nitride layer on the aluminum gallium nitride layer having a thickness that functionally minimizes the number of defects propagated through it. At least two doped Group III nitride layers are on the buffer structure, with the layers being of opposite conductivity type from one another for providing electrons and holes that combine to generate an emission from the device when current is applied to the device.
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Cree Inc.
Myers Bigel Sibley & Sajovec P.A.
Nadav Ori
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