Substrate bonding method and electronic component thereof

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

Reexamination Certificate

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C438S455000, C257SE21211

Reexamination Certificate

active

08048772

ABSTRACT:
A substrate bonding method has a film forming step of forming an insulating film for bonding in such a manner that an SiO2film made of TEOS is deposited on at least one of a first substrate and a second substrate by a CVD method, and a bonding step of bonding the first substrate and the second substrate with the insulating film for bonding being interposed between the first substrate and the second substrate.

REFERENCES:
patent: 2006/0237810 (2006-10-01), Sand et al.
patent: 2008/0311726 (2008-12-01), Ohnuma et al.
patent: 2010/0015782 (2010-01-01), Yu et al.
patent: 1582072 (2005-02-01), None
patent: 101023517 (2007-08-01), None
patent: 2004-160607 (2004-06-01), None
patent: 2007-509578 (2007-04-01), None
patent: 2007-184546 (2007-07-01), None
patent: 2006/029651 (2006-03-01), None
Patent Abstracts of Japan, Publication No. 2007-184546, Publication Date: Jul. 19, 2007, 1 page.
Patent Abstracts of Japan, Publication No. 2004-160607, Publication Date: Jun. 10, 2004, 1 page.
English abstract of CN1582072A published on Feb. 16, 2005, 1 page.
English abstract of CN101023517A published on Aug. 22, 2007, 1 page.
Chinese Office Action issued in Chinese Application No. 2009101599812.X issued on Apr. 28, 2011 and English translation thereof, 11 pages.

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