Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2009-07-14
2011-11-01
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S455000, C257SE21211
Reexamination Certificate
active
08048772
ABSTRACT:
A substrate bonding method has a film forming step of forming an insulating film for bonding in such a manner that an SiO2film made of TEOS is deposited on at least one of a first substrate and a second substrate by a CVD method, and a bonding step of bonding the first substrate and the second substrate with the insulating film for bonding being interposed between the first substrate and the second substrate.
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Chinese Office Action issued in Chinese Application No. 2009101599812.X issued on Apr. 28, 2011 and English translation thereof, 11 pages.
Moriguchi Makoto
Shiozaki Masayoshi
Lindsay, Jr. Walter L
OMRON Corporation
Osha • Liang LLP
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