Substrate bias generators

Details Substrate bias generators Substrate bias generators

1985-03-19

1987-10-20

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307296R, 307304, 307200B, H03K 3353, H03L 100

Patent

active

047016370

ABSTRACT:
A substrate bias generator or circuit is provided which includes a charge pump having a series circuit with first and second nodes connected between a semiconductor substrate and a point of reference potential. A first voltage having a first phase is coupled to the first node and a second voltage having a second phase is coupled to the second node. A field effect transistor is connected between the substrate and the second node and the control electrode of the transistor is connected to the first node. The series circuit includes first and second devices, preferably diodes, with the first device being connected between the first node and the point of reference potential and the second device being connected between the first and second nodes.

REFERENCES:
patent: 4229667 (1980-10-01), Heimbigner et al.
patent: 4322675 (1982-03-01), Lee et al.
patent: 4336466 (1982-06-01), Sud et al.
patent: 4378506 (1983-03-01), Taira
patent: 4403158 (1983-09-01), Slemmer
patent: 4409496 (1983-10-01), Baba
patent: 4450515 (1984-05-01), Takemae et al.
patent: 4471290 (1984-09-01), Yamaguchi
patent: 4571505 (1986-02-01), Eaton, Jr.

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