Substrate bias generator for dynamic RAM having variable pump cu

Details Substrate bias generator for dynamic RAM having variable pump cu Substrate bias generator for dynamic RAM having variable pump cu

1983-07-08

1986-04-29

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307297, H03K 3354

Patent

active

045859540

ABSTRACT:
A dynamic MOS read/write memory has a substrate bias generator circuit which includes, in this example, four separate pump circuits. A first of these operates only during power-up to quickly produce the desired back bias; this pump circuit uses a high frequency oscillator and a low impedence drive, and cuts off to save power as soon as the necessary bias is reached. A second generates a smaller sustaining current, using a lower frequency oscillator and higher impedance drive; this functions to compensate for leakage during idle periods. The third and fourth pump circuits are driven by RAS and CAS, so these occur only when needed, and at a rate dependent upon the actual operating condition of the memory.

REFERENCES:
patent: 4322675 (1982-03-01), Lee et al.
patent: 4388537 (1983-06-01), Kanuma
patent: 4409496 (1983-10-01), Baba
patent: 4455628 (1984-06-01), Ozaki et al.
patent: 4460835 (1984-07-01), Masuoka
patent: 4471290 (1984-09-01), Yamaguchi

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