Substrate bias generator

Details Substrate bias generator Substrate bias generator

1980-01-03

1981-03-10

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 41, 357 23, 307304, H01L 2702

Patent

active

042557569

ABSTRACT:
The disposed substrate bias generator comprises a capacitor including an electrically insulating film sandwiched between two electrodes one of which is disposed on one main face of a p.sup.- semiconductor substrate through another electrically insulating film, and a first, a second and a third N.sup.+ semiconductor region disposed in spaced relationship on the same main face. The first and second regions form a grounded source and a drain of an MOSFET connected to both its gate and one of the electrodes of the capacitor. The second and third regions form a source and a drain of another MOSFET connected to both its gate and the other main face of the substrate. A signal is applied to the other electrode of the capacitor.

REFERENCES:
patent: 3794862 (1974-02-01), Jenne
patent: 4183040 (1980-01-01), Rideont
patent: 4197554 (1980-04-01), Meusburger
patent: 4224635 (1980-09-01), Mauthe
1976 IEEE Int. Solid State Circuits Conf. (Digest), pp. 138, 139, 238.

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