Substrate bias generation circuit used in semiconductor integrat

Details Substrate bias generation circuit used in semiconductor integrat Substrate bias generation circuit used in semiconductor integrat

1990-06-18

1991-08-27

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3073032, 3074821, 357 42, 357 235, H03K 301

Patent

active

050435973

ABSTRACT:
A semiconductor integrated circuit device includes a semiconductor substrate, a semiconductor integrated circuit including the semiconductor substrate, a semiconductor chip having the semiconductor substrate and semiconductor integrated circuit, and a plurality of substrate bias generation circuits arranged on the semiconductor chip in such a manner as to derive substrate bias voltages from a power source voltage supplied from the exterior to the semiconductor chip and uniformly apply the substrate bias voltages over the entire the semicondutor substrate.

REFERENCES:
patent: 4430581 (1984-02-01), Mogi et al.
patent: 4491746 (1985-01-01), Koike
patent: 4494223 (1985-01-01), Reddy et al.
patent: 4539490 (1985-09-01), Ariizumi et al.
patent: 4686388 (1987-08-01), Hafner
patent: 4705966 (1987-11-01), Van Zanten
patent: 4791317 (1988-12-01), Winnerl et al.

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