Substrate and heat sink for a semiconductor and method of manufa

Details Substrate and heat sink for a semiconductor and method of manufa Substrate and heat sink for a semiconductor and method of manufa

1996-02-14

1999-03-23

Jenkins, Daniel J.

Specialized metallurgical processes, compositions for use therei

Compositions

Consolidated metal powder compositions

75248, B22F 326, B22F 500

Patent

active

058862692

ABSTRACT:
A substrate serving as a heat sink for a semiconductor efficiently radiates heat from a semiconductor element mounted thereon. The substrate consists of a composite alloy metal which consists of a sintered body of a metal powder having a high melting point such as W and Mo impregnated with a filling metal such as Cu and Ag, wherein the sintered body of a metal powder having a high melting point has a grain size composition of a combination of a plurality of powder groups having statistically different average grain sizes from group to group, and the powder of each group is dispersed uniformly.

REFERENCES:
patent: 4025997 (1977-05-01), Gernitis et al.
patent: 4361720 (1982-11-01), Resneau et al.
patent: 4788627 (1988-11-01), Ehlert et al.
patent: 5561321 (1996-10-01), Hirano et al.
patent: 5601924 (1997-02-01), Beane et al.
patent: 5614043 (1997-03-01), Ritland et al.
patent: 5614320 (1997-03-01), Beane et al.

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