Substituted silicon nitride material and method of production th

Details Substituted silicon nitride material and method of production th Substituted silicon nitride material and method of production th

1989-04-04

1990-12-04

Dixon, Jr., William R.

Compositions: ceramic

Ceramic compositions

Refractory

501 97, C04B 3558

Patent

active

049753959

ABSTRACT:
Substituted silicon aluminum oxynitrides are made electrically conductive by inclusion of titanium nitride at low levels, e.g. 15-38 vol %, by inclusion of titanium dioxide and in situ conversion thereof to titanium nitride which is contained in an intergranular phase. Further improvements in conductivity can be achieved by converting the intergranular phase from a glassy state to a crystalline state.

REFERENCES:
patent: 4443394 (1984-04-01), Ezis
patent: 4659508 (1987-04-01), Higuchi et al.
patent: 4830800 (1989-05-01), Thomas et al.
patent: 4881950 (1989-11-01), Bhat et al.

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