Substantially facet-free selective epitaxial growth process

Details Substantially facet-free selective epitaxial growth process Substantially facet-free selective epitaxial growth process

1991-05-13

1992-12-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 148DIG27, 148DIG26, H01L 2120

Patent

active

051680890

ABSTRACT:
A process for growing selective epitaxial layers on a silicon substrate. In a epitaxial growth reactor, hydrogen and the reactive gasses, the silicon source gas and hydrochloric acid, are introduced. The amount of silicon to free hydrochloric acid is controlled to be about 1:6 during the growth process and then turned off, the hydrogen remaining on. The resulting epitaxial layer may be grown over one micron in thickness with less than 0.1 micron of faceting. Further, a etchant of H.sub.2 O and HF diluted in NHO.sub.3 is first used to remove surface damage on the silicon substrate prior to epitaxial layer growth.

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