Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1981-07-30
1987-02-17
Larkins, William D.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
204418, 333 99R, 333236, 361280, 357 2315, 357 72, H01L 2978, H01L 4900, G01N 2740, G01N 2722
Patent
active
046443800
ABSTRACT:
Disclosed is a substance-sensitive semiconductor and a method for making the same, wherein a substance-sensitive material is combined with photoresist material and applied to an electronic device structure. The substance-sensitive material may be applied before or after the photoresist material, or even may be combined with the photoresist material to form a substance-sensitive layer of photoresist material on the semi-conductor. The photoresist material is then processed, such that unwanted, or undesirable areas are free from the photoresist material and the areas of desired substance sensitivity have a fully processed photoresist layer. A further embodiment of the present disclosure provides multiple layers sensitive to different ions on a single sheet of semiconductor or electromagnetically active material.
REFERENCES:
patent: 3373323 (1968-03-01), Wolfrum et al.
patent: 3753720 (1973-08-01), Klozewski et al.
patent: 3831432 (1974-08-01), Cox
patent: 3953877 (1976-04-01), Sigusch et al.
patent: 3966580 (1976-06-01), Janata et al.
patent: 3999122 (1976-12-01), Winstel et al.
patent: 4020830 (1977-05-01), Johnson et al.
patent: 4103227 (1978-07-01), Zemel
patent: 4158807 (1979-06-01), Senturia
patent: 4180771 (1979-12-01), Guckel
patent: 4571543 (1986-02-01), Raymond et al.
Bergveld, IEEE Trans. on Biomedical Engineering, vol. BME 19, No. 5, Sep. 1972, pp. 342-351 (particularly p. 345).
Janata et al., "Chemically Sensitive Field Effect Transistors", Biomedical Engineering, Jul. 1976, pp. 241-245.
Moss et al., "Potassium Ion Sensitive Field Effect Transistor", Analytical Chemistry, 47, No. 13, Nov. 1975.
Larkins William D.
University of Pennsylvania
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