Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Reexamination Certificate
2006-03-28
2006-03-28
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
C257S355000, C257S362000
Reexamination Certificate
active
07019338
ABSTRACT:
The present invention relates to a monolithic component of protection of a line against overvoltages than a determined positive threshold or smaller than a determined negative threshold, including in antiparallel a cathode-gate thyristor (Th1) and an anode-gate thyristor (Th2), the gate of the cathode-gate thyristor being connected to a negative threshold voltage (−V) via a gate current amplification transistor (T1), the gate of the anode-gate thyristor being connected to a positive threshold voltage (+V). The monolithic component is made in a substrate divided into wells separated by isolating walls (3, 4), the smaller surfaces of which are coated with insulating layers (5, 6), the smaller surface of the substrate being uniformly coated with a metallization (M1).
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International Search Report for PCT/FR 98/02907 filed Dec. 29, 1998.
Jorgenson Lisa K.
McClellan William R.
Nadav Ori
STMicroelectronics S.A.
Wolf Greenfield & Sacks P.C.
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