Subresolution silicon features and methods for forming the same

Details Subresolution silicon features and methods for forming the same Subresolution silicon features and methods for forming the same

2010-02-25

2011-12-27

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

C257S623000, C257S624000, C257S626000

Reexamination Certificate

active

08084845

ABSTRACT:
Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.

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