Submounts for Semiconductor Lasers

Details Submounts for Semiconductor Lasers Submounts for Semiconductor Lasers

2010-12-28

2011-11-29

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular temperature control

C372S036000

Reexamination Certificate

active

08068524

ABSTRACT:
A submount for a semiconductor laser. The submount has a layer of silicon carbide (SiC) and a layer of aluminum nitride (AlN) deposited on the layer of SiC. The submount is bonded to the InP-based laser by a hard solder applied to the AlN layer. Preferably, the thickness of the AlN layer is ten to twenty microns, the thickness of the SiC layer is two hundred fifty microns, and the solder is a gold-tin (AuSn) eutectic. The semiconductor laser may be a quantum cascade laser (QCL). Similar combinations of submount materials can be found for other semiconductor laser material systems and types.

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