Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-11-20
2007-11-20
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23023, C257SE23026, C257SE21509
Reexamination Certificate
active
10506510
ABSTRACT:
A submount that enables the reliable mounting of a semiconductor light-emitting device on it, and a semiconductor unit incorporating the submount. A submount3comprises (a) a substrate4; and (b) a solder layer8formed on the top surface4fof the substrate4. The solder layer8before melting has a surface roughness, Ra, of at most 0.18 μm. It is more desirable that the solder layer8before melting have a surface roughness, Ra, of at most 0.15 μm, yet more desirably at most 0.10 μm. A semiconductor unit1comprises the submount3and a laser diode2mounted on the solder layer8of the submount3.
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Amoh Teruo
Higaki Kenjiro
Ishii Takashi
Tsuzuki Yasushi
McDermott Will & Emery LLP
Ngo Ngan V.
Sumitomo Electric Industries Ltd.
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