Submount and semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Reexamination Certificate

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Details

C257S099000, C257S772000, C257SE31012

Reexamination Certificate

active

10520385

ABSTRACT:
The present invention provides a submount that allows a semiconductor light-emitting element to be attached with a high bonding strength.A submount3is equipped with a substrate3and a solder layer8formed on a primary surface4fof the substrate4. The density of the solder layer8is at least 50% and no more than 99.9% of the theoretical density of the material used in the solder layer8. The solder layer8contains at least one of the following list: gold-tin alloy; silver-tin alloy; and lead-tin alloy. The solder layer8before it is melted is formed on the substrate4and includes an Ag film8band an Sn film8aformed on the Ag film8b. The submount3further includes an Au film6formed between the substrate4and the solder layer8.

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