Submount and semiconductor device

Details Submount and semiconductor device Submount and semiconductor device

2006-03-21

2006-03-21

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S232000, C257S666000, C257S676000, C257S736000

Reexamination Certificate

active

07015583

ABSTRACT:
A submount can mount on it a semiconductor light-emitting device with high bonding strength, and a semiconductor unit incorporates the submount. The submount comprises (a) a submount substrate, (b) a solder layer formed at the top surface of the submount substrate, and (c) a solder intimate-contact layer that is formed between the submount substrate and the solder layer and that has a structure in which a transition element layer consisting mainly of at least one type of transition element and a precious metal layer consisting mainly of at least one type of precious metal are piled up. In the above structure, the transition element layer is formed at the submount-substrate side. The semiconductor unit is provided with a semiconductor light-emitting device mounted on the solder layer of the submount.

REFERENCES:
patent: 5770821 (1998-06-01), Hikasa et al.
patent: 6590913 (2003-07-01), Caras et al.
patent: 2002/0149114 (2002-10-01), Soga et al.
patent: 2002/0181523 (2002-12-01), Pinneo et al.
patent: 2005/0067636 (2005-03-01), Amoh et al.
patent: 60-74539 (1985-04-01), None
patent: 11-307692 (1999-11-01), None
patent: 2000-328286 (2000-11-01), None

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