Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1978-11-13
1981-05-26
Tupman, W. C.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29580, 357 59, B01J 1700
Patent
active
042689511
ABSTRACT:
Semiconductor devices with gate dimensions as small as 0.25 microns square have been fabricated using electron beam lithography and dry processing techniques. In particular, silicon gate, N-channel, metal-oxide-semiconductor (NMOS) field-effect-transistors (FET) have been produced. The devices and the process are especially adapted to bulk silicon based transistors.
REFERENCES:
patent: 3789504 (1974-02-01), Jaddam
patent: 3869786 (1975-03-01), Adam
patent: 4114255 (1978-09-01), Salsbury
patent: 4160987 (1979-07-01), Dennard
patent: 4178674 (1979-12-01), Liu
Elliott Michael T.
Jones Addison B.
Reekstin John P.
Splinter Michael R.
Caldwell Wilfred G.
Hamann H. Fredrick
McGlynn Daniel R.
Rockwell International Corporation
Tupman W. C.
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