Submicron semiconductor device and a fabricating method thereof

Details Submicron semiconductor device and a fabricating method thereof Submicron semiconductor device and a fabricating method thereof

2007-03-06

2007-03-06

Thanh, Nguyen (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

C438S745000, C438S753000, C438S756000, C438S947000, C438S717000, C438S719000, C438S723000

Reexamination Certificate

active

10747946

ABSTRACT:
A method of forming a pattern finer than an existing pattern in a semiconductor device using an existing light source and a hard mask, and a method of removing the hard mask which is used as an etching mask. The method includes forming an oxide layer on a substrate; forming a polysilicon layer on the oxide layer; forming a hard mask on the polysilicon layer; depositing photoresist on the hard mask and patterning the hard mask by using the photoresist; and etching the polysilicon layer using the pattern embodied by the hard mask. By fabricating a gate oxide with a finer linewidth using a hard mask and existing equipment, the present invention can control the linewidth required in each product by using an etching process, and, therefore, has advantages such as expandability of process, extension of generality, and maximization of productivity in the production line.

REFERENCES:
patent: 5332445 (1994-07-01), Bergman
patent: 6030541 (2000-02-01), Adkisson et al.
patent: 6251719 (2001-06-01), Wang
patent: 6420097 (2002-07-01), Pike et al.
patent: 6482726 (2002-11-01), Aminpur et al.
patent: 6878646 (2005-04-01), Tsai et al.
patent: 2003/0211684 (2003-11-01), Guo
patent: 2004/0038436 (2004-02-01), Mori et al.
patent: 2004/0121593 (2004-06-01), Matsunuma
Wolf, Stanley “silicon processing for the VLSI ERA” 1986, vol. 2, pp. 194.
Wolf, Stanley “silicon processing for the VLSI ERA” 1986, vol. 2, pp. 542-551.

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