Submicron device fabrication

Details Submicron device fabrication Submicron device fabrication

2006-04-27

2008-08-12

Pham, Thanh Van (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

C438S694000, C438S695000, C438S702000, C438S703000, C438S712000, C438S717000, C438S723000, C438S734000, C438S751000, C438S756000, C438S759000, C216S002000, C977S887000, C977S888000, C977S890000, C977S891000, C977S892000, C257SE21240, C257SE21483

Reexamination Certificate

active

07410901

ABSTRACT:
A method for fabricating substrate material to include trenches and unreleased beams with submicron dimensions includes etching a first oxide layer on the substrate to define a first set of voids in the first oxide layer to expose the substrate. A second oxide layer is accreted to the first oxide layer to narrow the first set of voids to become a second set of voids on the substrate. A polysilicon layer is deposited over the second oxide layer, the first oxide layer and the substrate. A third set of voids is etched into the polysilicon layer. Further etching widens the third set of voids to define a fourth set of voids to expose the first oxide layer and the substrate. The first oxide layer and the substrate is deeply etched to define beams and trenches in the substrate.

REFERENCES:
patent: 3342650 (1967-09-01), Tauchi et al.
patent: 3811975 (1974-05-01), Van Lierop et al.
patent: 4356730 (1982-11-01), Cade
patent: 5235187 (1993-08-01), Arney et al.
patent: 5426070 (1995-06-01), Shaw et al.
patent: 2006/0228064 (2006-10-01), Hunt et al.
patent: 2006/0249776 (2006-11-01), Manning et al.
patent: 2007/0052322 (2007-03-01), Tai et al.

Affiliated with

Also associated with

Rating

Submicron device fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Submicron device fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Submicron device fabrication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4001950