Submicron conductor manufacturing

Metal working – Method of mechanical manufacture – Assembling or joining

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29579, 29591, 29576B, 148 15, 357 22, 357 65, 427 89, 427 99, 427 91, 156651, H01L 2128, H01L 21283, H01L 21302

Patent

active

045425779

ABSTRACT:
A submicron conductor is formed by placing a metal member over an insulator both terminating at a common defined edge. An angularly deposited metal against the edge provides a broad metal conductor attached along the entire edge of a thin metal member which is positioned on the substrate on a narrow line with the width defined by the horizontal component of the angular deposition. A removal operation removes with respect to the vertical component of the angular deposition the excess angularly deposited metal and leaves a vertical, very narrow metal conductor having a horizontal metal over the dielectric in electrical and supporting contact along the entire length. The asymmetry of the conductor provides field effect transistor advantages.

REFERENCES:
patent: 3387360 (1968-06-01), Nakamura et al.
patent: 3914857 (1975-10-01), Goser et al.
patent: 3967365 (1976-07-01), Friedrich
patent: 4232439 (1980-11-01), Shibata
patent: 4280854 (1981-07-01), Shibata et al.
patent: 4354896 (1982-10-01), Hunter et al.
patent: 4358340 (1982-11-01), Fu
Speidell "A Simple Method for Fabricating Submicron Lines" J. Vac. Sch. Technol, 19(3), Sep./Oct. 1981, pp. 693-695.

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