Sublithographic contact structure, in particular for a phase...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S098000, C438S103000, C257SE21068

Reexamination Certificate

active

07618840

ABSTRACT:
A contact structure for a PCM device is formed by an elongated formation having a longitudinal extension parallel to the upper surface of the body and an end face extending in a vertical plane. The end face is in contact with a bottom portion of an active region of chalcogenic material so that the dimensions of the contact area defined by the end face are determined by the thickness of the elongated formation and by the width thereof.

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Palun, L., et al., “Fabrication of Single Electron Device by Hybrid (E-Beam/DUV) Lithography,” Microelectronic Engineering, 53: 167-170, 2000.

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