Sublithographic antifuse

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257755, H01L 2900

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active

056252200

ABSTRACT:
This antifuse includes: a sublithographic conductive pattern (18); an antifuse material (24) overlying said sublithographic conductive pattern (18); and a conductive layer (26) overlying the antifuse material (24) to form a reduced area antifuse (10). Other devices, systems and methods are also disclosed.

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Thomas Clifton Penn, "New Methods of Processing Silicon Slices", Science vol. 208 (May 1980) pp. 923-926.
Liu et al., "Scaled Dielectric Antifuse Structure for Field Programmable Gate Array Applications", Aug. 23, 1990.
Yau, Leo D., Determination of the Fowler-Nordheim Tunneling Barrier from Nitride to Oxide in Oxide: Nitride Dual Dielectric, IEEE Electron Device Letters, vol. EDL--7, 6 Jun. 1986, pp. 365-367.

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