Sublimation of silicon carbide to produce large, device quality

Details Sublimation of silicon carbide to produce large, device quality Sublimation of silicon carbide to produce large, device quality

1990-10-09

1995-02-14

Fourson, George

Fishing, trapping, and vermin destroying

117105, H01L 21365

Patent

active

RE0348619

ABSTRACT:
The present invention is a method of forming large device quality single crystals of silicon carbide. The sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the source materials, by specific preparation of the growth surface and seed crystals, and by controlling the thermal gradient between the source materials and the seed crystal.

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