Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1998-03-11
2000-10-03
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257401, 257510, H01L 2900, H01L 31119
Patent
active
061277193
ABSTRACT:
A subfield conductive layer is provided, wherein a conductive layer is implanted beneath and laterally adjacent a field dielectric. The subfield conductive layer is placed within the silicon substrate after the field dielectric is formed. The conductive layer represents a buried interconnect which resides between isolated devices. The buried interconnect, however, is formed using high energy ion implant through a field dielectric formed either by LOCOS or shallow trench isolation techniques. The buried interconnect, or conductive layer, resides and electrically connects source and drain regions of two isolated devices.
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Bandyopadhyay Basab
Brennan William S.
Dawson Robert
Fulford Jr. H. Jim
Hause Fred N.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Thomas Tom
Vu Hung K.
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