Subcollector for oxide and junction isolated IC's

Details Subcollector for oxide and junction isolated IC's Subcollector for oxide and junction isolated IC's

1985-04-08

1987-02-17

Larkins, William D.

Metal treatment

Stock

Ferrous

357 20, 357 48, 357 89, 148DIG37, 148DIG145, H01L 2704

Patent

active

046443835

ABSTRACT:
A vertical bipolar transistor having a subcollector region of two different thicknesses is provided to increase packing density. The thicker portion lies beneath the area between the emitter and the collector contact. A single additional masking step is needed to provide the dual thickness subcollector region.

REFERENCES:
patent: 3510736 (1970-05-01), Dingwall
patent: 3622842 (1971-11-01), Oberai
patent: 3677837 (1972-07-01), Ashar
patent: 3709746 (1973-01-01), De Witt
patent: 3761319 (1973-09-01), Shannon
patent: 3976512 (1976-08-01), de Nora et al.
patent: 4079408 (1978-03-01), Kwap
patent: 4116732 (1978-09-01), Shier
patent: 4190466 (1980-02-01), Bhattacharyya et al.
patent: 4190949 (1980-03-01), Ikeda et al.
patent: 4202005 (1980-05-01), Sanders

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