Sub volt flash memory system

Details Sub volt flash memory system Sub volt flash memory system

2011-08-02

2011-08-02

Dinh, Son T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S230060

Reexamination Certificate

active

07990773

ABSTRACT:
Various circuits include MOS transistors that have a bulk voltage terminal for receiving a bulk voltage that is different from a supply voltage and ground. The bulk voltage may be selectively set so that some MOS transistors have a bulk voltage set to the supply voltage or ground and other MOS transistors have a bulk voltage that is different. The bulk voltage may be set to forward or reverse bias pn junctions in the MOS transistor. The various circuits include comparators, operational amplifiers, sensing circuits, decoding circuits and the other circuits. The circuits may be included in a memory system.

REFERENCES:
patent: 6282145 (2001-08-01), Tran et al.
patent: 6788608 (2004-09-01), Tran et al.
patent: 7139196 (2006-11-01), Tran
patent: 7239557 (2007-07-01), Ha
patent: 7405988 (2008-07-01), Tran et al.
patent: 2007/0070703 (2007-03-01), Tran et al.

Affiliated with

Also associated with

Rating

Sub volt flash memory system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sub volt flash memory system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sub volt flash memory system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2708806