Sub-resolution assist feature to improve symmetry for...

Details Sub-resolution assist feature to improve symmetry for... Sub-resolution assist feature to improve symmetry for...

2011-07-26

2011-07-26

Doan, Nghia (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Design of semiconductor mask or reticle

Manufacturing optimizations

C716S050000, C716S051000, C716S053000, C716S055000, C430S005000, C430S030000

Reexamination Certificate

active

07987436

ABSTRACT:
A method of making a mask design having optical proximity correction features is provided. The method can include obtaining a target pattern comprising a plurality of target pattern features corresponding to a plurality of features to be imaged on a substrate. The method can also comprise generating a mask design comprising mask features corresponding to the plurality of features to be imaged on the substrate and controlling the aspect ratio of at least one of the features of the plurality of features to be imaged on the substrate by positioning a sub-resolution assist feature proximate to the corresponding mask feature.

REFERENCES:
patent: 6355382 (2002-03-01), Yasuzato et al.
patent: 6396569 (2002-05-01), Zheng et al.
patent: 7523438 (2009-04-01), Hsu et al.
patent: 7562333 (2009-07-01), Parikh et al.
patent: 7563547 (2009-07-01), Park et al.

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