Sub-nanometer overlay, critical dimension, and lithography...

Details Sub-nanometer overlay, critical dimension, and lithography... Sub-nanometer overlay, critical dimension, and lithography...

2008-01-29

2008-01-29

Connolly, Patrick (Department: 2877)

Optics: measuring and testing

By light interference

For dimensional measurement

C355S053000

Reexamination Certificate

active

11208424

ABSTRACT:
A method of processing a substrate on which a layer of photoresist has been applied, the method involving: exposing the layer of photoresist to radiation that carries spatial information to generate exposure-induced changes in the layer of photoresist that form a pattern having one or more features; and before developing the exposed photoresist, interferometrically obtaining measurements of the pattern in the exposed layer of photoresist for determining at least one of (1) locations of the one or more features of the pattern and (2) magnitudes of the exposure-induced changes.

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