Sub-micron through-the-lens positioning utilizing out of phase s

Details Sub-micron through-the-lens positioning utilizing out of phase s Sub-micron through-the-lens positioning utilizing out of phase s

1995-08-17

1997-01-21

Gonzalez, Frank

Optics: measuring and testing

By alignment in lateral direction

With registration indicia

250548, G01B 1100

Patent

active

055964133

ABSTRACT:
Through-the-lens alignment during deep UV lithographic processing in the manufacture of VLSI is accomplished without shifting the mask or wafer from the exposure position. Introduction and extraction of alignment light of actinic wavelength depends on beam routing due to diffraction from an interference grating. The path of alignment light is within the focusing system but does not impinge on the focused pattern.

REFERENCES:
patent: 4664524 (1987-05-01), Hattori et al.
patent: 4830500 (1989-05-01), Kuroki et al.
Burggraaf, P., "Overlay: Lithography's Big Challenge", Semiconductor International, pp. 58-61 (1991).
Potenza, G., "Registration Accuracy in Submicron Devices", Microelectronic Engineering, 17 pp. 59-88 (1992).
Wittekoek, S., et al., "Deep UV Wafer Stepper with Through The Lens Wafer to Reticle Alignment", SPIE, vol. 1264, pp. 534-547 (1990).
Kuo, B. C., Automatic Control Systems, 4th ed., Prentice-Hall (1982).
Saleh, B., et al., Fundamentals of Photonics, John Wiley and Sons, pp. 800-806.

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