Sub-micron device fabrication

Details Sub-micron device fabrication Sub-micron device fabrication

1991-03-22

1993-06-08

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 4, 430311, G03F 900

Patent

active

052178315

ABSTRACT:
Expedient fabrication of phase masks providing for many values of phase delay for exiting pattern delineating radiation depends upon a two-step procedure. Such masks offer improvement in ultimate device fabrication relative to that offered by prior binary-valued masks. In the first step, which may be carried out coincident with introduction of device feature information, apertures of appropriate size and distribution are produced in the relevant mask layer; in the second step material surrounding such apertures is heated to result in backflow-filling. The consequential layer thinning is such as to introduce the desired local change in phase delay.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5091979 (1992-02-01), White
M. D. Levenson, et al., IEEE Trans. Electron Devices, v. ED-29 (12), p. 1828 (1982).
L. E. Stillwagon & R. G. Larson, "Fundamentals of Topographic Substrate Leveling", J. Appl. Phys., vol. 63 (11), Jun. 1, 1988, p. 5251.
Reynolds, DeVelis, Parrent, Thompson, "Physical Optics Notebook", Tutorial in Fourier Optics, pub. SPIE Optical Engineering Press, p. 27 (1989).
L. F. Thompson, et al., "Introduction to Microlithography", ACS Symposium Series, p. 73 (1983).

Affiliated with

Also associated with

Rating

Sub-micron device fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sub-micron device fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sub-micron device fabrication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1932970